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| Ordering number:ENN6260 N-Channel Silicon MOSFET 3LN01C Ultrahigh-Speed Switching Applications Features * Low ON resistance. * Ultrahigh-speed switching. * 2.5V drive. Package Dimensions unit:mm 2091A [3LN01C] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions 1 : Gate 2 : Source 3 : Drain SANYO : CP 0.8 1.1 Ratings 30 10 150 600 0.25 150 -55 to +150 Unit V V mA mA W C C Electrical Characteristics at Ta = 25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=100A VDS=10V, ID=80mA ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V 0.4 0.15 0.22 2.9 3.7 6.4 3.7 5.2 12.8 Conditions Ratings min 30 10 10 1.3 typ max Unit V A A V S Marking : YA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21400TS (KOTO) TA-1987 No.6260-1/4 3LN01C Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA IS=150mA, VGS=0 Conditions Ratings min typ 7.0 5.9 2.3 19 65 155 120 1.58 0.26 0.31 0.87 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN VIN VDD=15V ID=80mA RL=187.5 4V 0V PW=10s D.C.1% D G VOUT 3LN01C P.G 50 S 0.16 0.14 ID -- VDS V 5V 0.30 ID -- VGS VDS=10V Ta= --25 C 3.5V 4.0V 6.0 V 3.0 2. 0.25 Drain Current, ID - A Drain Current, ID - A 0.10 0.08 0.15 VGS=1.5V 0.06 0.04 0.10 0.05 0.02 0 0 0.2 0.4 0.6 0.8 1.0 IT00029 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT00030 Drain-to-Source Voltage, VDS - V 10 9 Gate-to-Source Voltage, VGS - V RDS(on) -- VGS Ta=25C Static Drain-to-Source On-State Resistance, RDS (on) - RDS(on) -- ID VGS=4V Static Drain-to-Source On-State Resistance, RDS (on) - 7 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 5 ID=80mA 40mA Ta=75C 3 25C --25C 2 Gate-to-Source Voltage, VGS - V 1.0 0.01 2 3 5 7 IT00031 Drain Current, ID - A 0.1 2 75 C 3 0.20 No.6260-2/4 25 C 5 7 1.0 IT00032 0.12 V 2.0 3LN01C 10 RDS(on) -- ID VGS=2.5V Static Drain-to-Source On-State Resistance, RDS (on) - 100 7 5 3 2 RDS(on) -- ID VGS=1.5V Static Drain-to-Source On-State Resistance, RDS (on) - 7 5 Ta=75C 25C 3 --25C 10 7 5 3 2 Ta=75C --25C 25C 2 1.0 0.01 2 3 5 7 0.1 2 3 5 Drain Current, ID - A 7 1.0 IT00033 7 1.0 0.001 2 3 5 7 0.01 2 3 5 Drain Current, ID - A 1.0 7 0.1 IT00034 RDS(on) -- Ta Forward Transfer Admittance, | yfs | - S yfs -- ID VDS=10V 7 5 3 2 Static Drain-to-Source ON-State Resistance, RDS (on) - 6 5 4 40 I D= m A, =2. V GS 5V -2 Ta=- 5C 75C 25C 3 80 I D= 2 m 4.0 S= A, VG V 0.1 7 5 3 2 1 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta - C 1.0 7 5 0.01 0.01 2 3 5 7 0.1 2 3 5 IT00035 1000 Drain Current, ID - A 7 1.0 IT00036 IF -- VSD VGS=0 SW Time -- ID VDD=15V VGS=4V 7 3 2 Switching Time, SW Time - ns 5 3 2 Forward Current, IF - A td(off) tf 75 C 25 C --2 5C Ta = 0.1 7 5 3 2 100 7 5 3 2 tr td(on) 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT00037 10 0.01 2 3 5 7 0.1 2 IT00038 Diode Forward Voltage, VSD - V 100 7 5 Drain Current, ID - A Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS - V 10 9 8 7 6 5 4 3 2 1 0 VGS -- Qg VDS=10V ID=150mA Ciss, Coss, Crss - pF 3 2 10 7 5 3 2 Ciss Coss Crss 0 2 4 6 8 10 12 14 16 18 20 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS - V IT00039 Total Gate Charge, Qg - nC IT00040 No.6260-3/4 3LN01C 0.30 PD -- Ta Allowable Power Dissipation, PD - W 0.25 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta - C IT00041 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2000. Specifications and information herein are subject to change without notice. PS No.6260-4/4 |
Price & Availability of 3LN01C
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